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Items |
Standard |
Selected |
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Poly-type |
4H |
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Surface |
(0001) Si-face |
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Off-orientation |
4deg-off [11-20] |
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Conductivity |
n-type /p-type |
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Dopant |
Nitrogen / Aluminum |
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Carrier Concentration |
Range |
1E15 ~ 1E18 cm-3 |
＜1E15 或 ＞1E18 cm-3 |
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|
Tolerance |
±25% |
/ |
|
Epi thickness |
Range |
0.3 ~ 200 μm |
0.3 ~ 200 μm |
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|
Tolerance |
±10% |
±10% |
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Surface defect |
≤ 1 cm-2 |
≤ 1 cm-2 |
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|
Surface roughness |
≤ 2 nm |
≤ 2 nm |
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Notes:
Ⅰ The carrier concentration and thickness of each layer cannot be directly measured.
Ⅱ Surface defects include downfall, triangles, carrots, particles.
Ⅲ The roughness is tested by AFM,the scan size is 10×10μm2.
Ⅳ Better products can be customized.