The core value of PowerEpi lies in its capability to achieve mass production of high-quality SiC epitaxial layers. Of particular importance is the comprehensive process control throughout the epitaxy procedure. The ultimate objectives are to generate profit and earn customer trust through our superior, high-yield epiwafer products. Our innovation highlights include: advanced epitaxy technology aligned with device manufacturing processes, sophisticated analysis and detection of material defects, and enhancements in critical aspects of CVD furnace operations.

PowerEpi has successfully mastered advanced SiC epitaxial growth processes, enabling the company to manufacture a wide range of high-specification epitaxial wafers. The performance of these wafers is among the best in China. PowerEpi has achieved significant breakthroughs in key process technologies required for mass-producing high-quality SiC epitaxial wafers and has successfully passed multiple rounds of chip verification by downstream device manufacturers. As a result, the performance metrics of PowerEpi's products have received high acclaim from these manufacturers.

At present, the company owns 13 patents and has set foot in potential fields for the future.