Thick-film Epiwafer

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Items

Standard

Standard

Poly-type

4H

Surface

(0001) Si-face

Off-orientation

4deg-off [11-20]

Conductivity

n-type

p-type

Dopant

Nitrogen

Aluminum

Carrier Concentration

Range

1E14 ~ 5E15cm-3

2E14 ~ 5E17cm-3

Tolerance

±15%

±25%

Uniformity(s/mean)

≤6%

≤15%

Epi thickness

Range

20 ~ 200 μm

20 ~ 200 μm

Tolerance

± 6 %

± 6 %

Uniformity(s/mean)

≤ 2%

≤ 2%

Surface defect

≤1 cm-2

≤ 1 cm-2

Surface roughness

≤ 1 nm

≤ 2 nm

Notes:

Measure points for Thickness and Carrier Concentration . Generally, the test method concludes 9 points (as shown in the figure), also the customer can assign the test method.

Ⅰ Carrier Concentration by Hg-CV.
Ⅱ Thickness by FTIR.
Ⅲ Surface defects include downfall, triangles, carrots, particles.
Ⅳ The roughness is tested by AFM,the scan size is 10×10μm2
Ⅴ Better products can be customized.